Ultraviolet photodetector based on vertical β-Ga2O3 nanowire array on GaN substrate
نویسندگان
چکیده
منابع مشابه
Metal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
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ژورنال
عنوان ژورنال: Materials Research Express
سال: 2021
ISSN: 2053-1591
DOI: 10.1088/2053-1591/abff78